Cubic Boron Nitride Films with Low Stress
ZHAO Yong-nian1,2 , ZOU Guang-tian1 , HE Zhi1 , ZHU Pin-wen1 , WANG Xue-jin1 , ZHAO Bing2
1 State Key Laboratory for Superhard Materials,
2 Key Laboratory for Supramolecular Structure and Spectroscopy, Jilin University, Changchun 130023
Cubic Boron Nitride Films with Low Stress
ZHAO Yong-nian1,2 ;ZOU Guang-tian1 ;HE Zhi1 ;ZHU Pin-wen1 ;WANG Xue-jin1 ;ZHAO Bing2
1 State Key Laboratory for Superhard Materials,
2 Key Laboratory for Supramolecular Structure and Spectroscopy, Jilin University, Changchun 130023
关键词 ：
81.15.Jj ,
81.15.Np ,
52.80.Vp
Abstract ： We report a cubic boron nitride (c-BN) film with low stress. Infrared (IR) peak position of c-BN at 1006.3cm-1 measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion. Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase. It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride, hexagonal boron nitride, and wurtzic boron nitride.
Key words ：
81.15.Jj
81.15.Np
52.80.Vp
出版日期: 1999-02-01
:
81.15.Jj
(Ion and electron beam-assisted deposition; ion plating)
81.15.Np
(Solid phase epitaxy; growth from solid phases)
52.80.Vp
(Discharge in vacuum)
引用本文:
ZHAO Yong-nian;ZOU Guang-tian;HE Zhi;ZHU Pin-wen;WANG Xue-jin;ZHAO Bing
. Cubic Boron Nitride Films with Low Stress[J]. 中国物理快报, 1999, 16(2): 155-156.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I2/155
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