All-Optical AND Logic Gate without Additional Input Beam by Utilizing Cross Polarization Modulation Effect
HAN Liu-Yan, WEN He, JIANG Huan, GUO Yi-Li, ZHANG Han-Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
All-Optical AND Logic Gate without Additional Input Beam by Utilizing Cross Polarization Modulation Effect
HAN Liu-Yan, WEN He, JIANG Huan, GUO Yi-Li, ZHANG Han-Yi
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084
A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in traditional scheme. AND output is obtained on either of two input signal wavelengths. The AND scheme is numerically simulated and experimentally demonstrated at a bit rate of 10Gb/s successfully.
A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in traditional scheme. AND output is obtained on either of two input signal wavelengths. The AND scheme is numerically simulated and experimentally demonstrated at a bit rate of 10Gb/s successfully.
[1] Zhang X, Wang Y, Sun J, Liu D and Huang D 2004 Opt. Express 12 361 [2] Guo L Q and Connelly M J 2006 Opt. Express 14 2938 [3] Dong H, Sun H, Wang Q, Dutta N K and Jaques J 2006 Opt. Commun. 265 79 [4] Li Z, Liu Y, Zhang S, Ju H, Waardt de H, Khoe G D, Dorren H J S and Lenstra D 2005 Electron. Lett. 41 51 [5] Huo L, Lin C, Chan C and Chen L 2007 Proc. OFC 2007 paper OThI4 [6] Kumar S and Willner A E 2006 Opt. Express 14 5092 [7] Guo L Q, and Connelly M J 2007 J. Lightwave Technol. 25 410 [8] Huang L, Huang D and Miu Q 2003 Chin. J. Semiconduct. 24 882 (in Chinese) [9] Contestabile G, Calabretta N, Presi M and Ciaramella E 2005 IEEE Photon. Technol. Lett. 17 2652 [10] Feng C, Wu J, Zhang J, Xu K and Lin J 2008 Chin. Phys. 17 1000