Strong second-order nonlinear effect of ZnO nanowires on a silicon wafer are demonstrated by using the hyper-Rayleigh scattering (HRS) measurement. The large nonlinear effect can be attributed to the following two factors: (1) the large total dipole moment caused by high surface defect density and electrostatic potential gradient, (2) coherent effect due to high crystal quality of single nanowire. Moreover, the second-order nonlinear effect is found to become weaker when the chip is put into organic solvent due to modification of surface defect caused by organic molecules. The variation of second-order signal in the solvent indicated the potential applications of ZnO nanowires as a sensor-on-chip (SoC).
Strong second-order nonlinear effect of ZnO nanowires on a silicon wafer are demonstrated by using the hyper-Rayleigh scattering (HRS) measurement. The large nonlinear effect can be attributed to the following two factors: (1) the large total dipole moment caused by high surface defect density and electrostatic potential gradient, (2) coherent effect due to high crystal quality of single nanowire. Moreover, the second-order nonlinear effect is found to become weaker when the chip is put into organic solvent due to modification of surface defect caused by organic molecules. The variation of second-order signal in the solvent indicated the potential applications of ZnO nanowires as a sensor-on-chip (SoC).
ZHU Jing;ZHU Guang-Ping;LU Chang-Gui; XU Chun-Xiang;CUI Yi-Ping. A Sensor-on-Chip Based on Second-Order Optical Effect of ZnO Nanowires[J]. 中国物理快报, 2009, 26(1): 14204-014204.
ZHU Jing, ZHU Guang-Ping, LU Chang-Gui, XU Chun-Xiang, CUI Yi-Ping. A Sensor-on-Chip Based on Second-Order Optical Effect of ZnO Nanowires. Chin. Phys. Lett., 2009, 26(1): 14204-014204.
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