Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy
WANG Hai-Li1, WU Dong-Hai1, WU Bing-peng1, NI Hqiao-Qiao1, HUANG She-Song1, XIONG Yong-Hua1, WANG Peng-Fei1, HAN Qin1, NIU Zhi-Chuan1, I. Tångring2, S. M. Wang2
1State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100082Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy
WANG Hai-Li1, WU Dong-Hai1, WU Bing-peng1, NI Hqiao-Qiao1, HUANG She-Song1, XIONG Yong-Hua1, WANG Peng-Fei1, HAN Qin1, NIU Zhi-Chuan1, I. Tångring2, S. M. Wang2
1State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100082Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden
摘要We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667A/cm2 under pulsed operation. The pulsed lasers can operate up to 286K.
Abstract：We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667A/cm2 under pulsed operation. The pulsed lasers can operate up to 286K.
WANG Hai-Li;WU Dong-Hai;WU Bing-peng;NI Hqiao-Qiao;HUANG She-Song;XIONG Yong-Hua;WANG Peng-Fei;HAN Qin;NIU Zhi-Chuan;I.Tångring;S. M. Wang. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy[J]. 中国物理快报, 2009, 26(1): 14214-014214.
WANG Hai-Li, WU Dong-Hai, WU Bing-peng, NI Hqiao-Qiao, HUANG She-Song, XIONG Yong-Hua, WANG Peng-Fei, HAN Qin, NIU Zhi-Chuan, I.Tå, ngring, S. M. Wang. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy. Chin. Phys. Lett., 2009, 26(1): 14214-014214.
[1] Ustinov V M and Zhukow A E 2000 Semicond. Sci.Technol. 15 R41 [2] Sellers I R, Liu H Y, Groom K M, Childs D T, Robbins D,Badcock T J, Hopkinson M, Mowbray D J and Skolnick A S 2004 Electron. Lett. 40 1412 [3] Liu H Y, Liew S L., Badcock T, Mowbray D J, Skolnick M S,Ray S K, Choi T L, Groom K M, Stevens B, Hasbullah F, Jin C Y,Hopkinson M and Hogg R A 2006 Appl. Phys. Lett. 89073113 [4] Peng C S, Jouthi T, Laukkanen, Pavelescu E M, Pavescu E M,Konttinen J, Li W and Pessa M 2000 IEEE Photonics Technol.Lett. 14 275 [5] Zhang S Y, Niu Z C, Ni H Q, Wu D H, He Z H, Sun Z, Han Qand Wu R H 2005 Appl. Phys. Lett. 87 161911 [6] Hopkinson M, Jin C Y, Liu H Y and Airey R 2006 Electron. Lett. 42 923 [7] Jaschke G, Jin C Y, Liu H Y, Navaretti P and Riechert H2005 J. Cryst. Growth 278 224 [8] Niu Z C, Zhang S Y, Ni H Q, Wu D H, Zhao H, Peng H L, Xu YQ, Li S Y, He Z H, Ren Z W, Han Q, Yang X Y, Du Y and Wu R H 2005 Appl. Phys. Lett. 87 231121 [9] Bank S R, Bae H P, Yuen H B, Wistey M A, Goddard L L andHarris J S 2006 Electron. Lett. 42 156 [10] Eisenbeiser K, Droopad R and Huang J H 1999 IEEEElectron. Device Lett. 20 507 [11] Zeng H Q, Radhakrishnan K, Wang H, Yuan K H, Yoon S F andNg G I 2000 Appl. Phys. Lett. 77 869 [12] Zhukov A E, Kovsh A R, Mikhrin S S, Semenova E S, MaleevN A, Vasil'ev A P, Nikitina E V, Kryzhanovskaya N V, Gladyshev A G,Shernyakov Y M, Musikhin Y G, Maksimov M V, Ledentsov N N, Ustinov VM and Alferov Z I 2003 Semiconductors 37 1143 [13] Tangring I, Wang S, Sadeghi M and Larsson A 2006 Electron. Lett. 42 691 [14] Ledentsov N N et al 2004 Quantum Dot Lasers: Physicsand Applications, SPIE Asia-Pacific Optical Communications (APOC'04) (Beijing, China, November 2004) [15] Cordier Y and Ferr\`{e D 1999 J. Cryst. Growth 201/202 263
2009, Vol. 26 
