Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor
DENG Jiang-Xia1, YAN Shi-Shen1, MEI Liang-Mo1, J. P. Liu2, B. Altuncevahir2, V. Chakka2, WANG Yong3, ZHANG Ze3, SUN Xiang-Cheng4, J. Lian4, K. Sun4
1School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 2501002Department of Physics, the University of Texas at Arlington, Box 19059, Arlington, Texas 76019, USA3Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 1000224Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor
DENG Jiang-Xia1, YAN Shi-Shen1, MEI Liang-Mo1, J. P. Liu2, B. Altuncevahir2, V. Chakka2, WANG Yong3, ZHANG Ze3, SUN Xiang-Cheng4, J. Lian4, K. Sun4
1School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 2501002Department of Physics, the University of Texas at Arlington, Box 19059, Arlington, Texas 76019, USA3Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 1000224Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
摘要Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110K to 300K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
Abstract：Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110K to 300K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
DENG Jiang-Xia;YAN Shi-Shen;MEI Liang-Mo;J. P. Liu;B. Altuncevahir;V. Chakka;WANG Yong;ZHANG Ze;SUN Xiang-Cheng;J. Lian;K. Sun. Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor[J]. 中国物理快报, 2009, 26(2): 27502-027502.
DENG Jiang-Xia, YAN Shi-Shen, MEI Liang-Mo, J. P. Liu, B. Altuncevahir, V. Chakka, WANG Yong, ZHANG Ze, SUN Xiang-Cheng, J. Lian, K. Sun. Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor. Chin. Phys. Lett., 2009, 26(2): 27502-027502.
[1] Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nature Mater. 4 173 [2] Alvarez G and Dagotto E 2004 J. Magn. Magn. Mater. 15 272 [3] Timm C, Sch\"afer F and von Oppen F 2002 Phys. Rev.Lett. 89 137201 [4] Alvarez G, Mayr M and Dagotto E 2002 Phys. Rev.Lett. 89 277202 [5] Kang J S, Kim G, Wi S C, Lee S S, Choi S, Cho S, Han S W,Kim K H, Song H J, Shin H J, Sekiyama A, Kasai S, Suga S and Min B I2005 Phys. Rev. Lett. 94 147202 [6] Song H Q, Mei L M, Yan S S, Ma X L, Wang Y and Zhang Z2006 J. Appl. Phys. 99 123903 [7] Yan S S, Ren C, Wang X, Xin Y, Zhou Z X, Mei L M, Ren M J,Chen Y X, Liu Y H and Garmestani H 2004 Appl. Phys. Lett. 84 2376 [8] Tian Y F, Yan S S, Zhang Y P, Song H Q, Ji G, Liu G L andMei L M 2006 J. Appl. Phys. 100 103901 [9] Zhang Y P, Yan S S, Liu Y H, Liu G L, Chen Y X, Mei L Mand Liu J P 2006 Solid State Commun. 140 405 [10] Chen Y X, Yan S S, Liu G L, Mei L M and Ren M J 2007 Chin. Phys. Lett. 24 214 [11] Walser P, Hunziker M, Speck T and Landolt M 1999 Phys. Rev. B 60 4082 [12] Liu Z Y and Adenwalla S 2003 Phys. Rev. Lett. 91 037207
2009, Vol. 26 
