摘要Channel hot-electron (HE) energy in short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.
Abstract：Channel hot-electron (HE) energy in short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.
SU Xin-Yan;HAN Yan;WANG Jian;YAO Jin-Jie. Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method[J]. 中国物理快报, 2009, 26(3): 37104-037104.
SU Xin-Yan, HAN Yan, WANG Jian, YAO Jin-Jie. Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method. Chin. Phys. Lett., 2009, 26(3): 37104-037104.
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