摘要Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total 1sccm N2/O2 mixed gas with various ratio at 750°C for 30min. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroelectric properties. After the BLT film is annealed in 20% O2, the largest Pr value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.
Abstract：Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total 1sccm N2/O2 mixed gas with various ratio at 750°C for 30min. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroelectric properties. After the BLT film is annealed in 20% O2, the largest Pr value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.
[1] Scott J F and Araujo C A 1989 Science 246 1400 [2] Haertling G H 1999 J. Am. Ceram. Soc. 82 797 [3] Ramesh R, Luther K, Wilkens B, Hart D L, Wang E andTrascon J M 1990 Appl. Phys. Lett. 57 1505 [4] Simoes A Z, Pianno R F C, Ries A, Varela J A and Longo E2006 J. Appl. Phys. 100 084106 [5] Fuierer P and Li B 2002 J. Am. Ceram. Soc. 85299 [6] Park B H, Kang B S, Bu S D, Noh T W, Lee J and Jo W 1999 Nature 401 682 [7] Bae J C, Kim S S, Choi E K, Song T K, Kim W J and Lee Y I2005 Thin Solid Films 472 91 [8] Sun C L, Chen S Y, Chen S B and Chin A 2002 Appl.Phys. Lett. 80 1984 [9] Park J, Nam K, Lee J and Park G 2004 Ceram. Intl. 30 1555 [10] Escote M T, Pontes F M, Leite E R, Longo E, Jardim R Fand Pizani P S 2004 J. Appl. Phys. 96 2187 [11] Sun Y M, Chen Y C, Gan J Y and Hwang J C 2002 Appl.Phys. Lett. 81 3221 [12] Cho H J, Jo W and Noh T W 1994 Appl. Phys. Lett. 65 1525 [13] Cheng C P, Tang M H, Yang J Y and Deng Y H 2008 Mater. Lett. 62 2450 [14] Li W, Ma J, Song C H, Bao P, Lu X M, Zhu J S and Wang Y N2004 Chin. Phys. Lett. 21 544 [15] Yan Z, Zhang W T, Wang Y, Zhang X, Li L, Zhao Q X, Du Jand Liu B T 2007 Chin. Phys. Lett. 24 3559 [16] Yu J, Meng X J, Sun J L, Huang Z M and Chu J H 2004 J. Appl. Phys. 96 2793 [17] Lee H N, Hesse D, Zakharov N and G\"{osele U 2002 Science 296 2006
2009, Vol. 26 
