摘要Ruthenium (Ru) nanocrystals (NCs) embedded in SiO2 gate stacks are formed by rapid thermal annealing for the whole gate stacks and embedded in the memory structure, which is compatible with conventional CMOS technology. The devices exhibit a substantial and clockwise hysteresis in capacitance-voltage measurement. The Ru NCs exhibit high density (2×1012cm-2), small size (2-4nm) and good uniformity both in spatial distribution and morphology. The charging and long-term retention performances are explained by the Coulomb Blockade phenomena and the asymmetric electron tunnel barrier between the Ru NCs and the Si substrate, respectively.
Abstract：Ruthenium (Ru) nanocrystals (NCs) embedded in SiO2 gate stacks are formed by rapid thermal annealing for the whole gate stacks and embedded in the memory structure, which is compatible with conventional CMOS technology. The devices exhibit a substantial and clockwise hysteresis in capacitance-voltage measurement. The Ru NCs exhibit high density (2×1012cm-2), small size (2-4nm) and good uniformity both in spatial distribution and morphology. The charging and long-term retention performances are explained by the Coulomb Blockade phenomena and the asymmetric electron tunnel barrier between the Ru NCs and the Si substrate, respectively.
MAO Ping;ZHANG Zhi-Gang;PAN Li-Yang;XU Jun;CHEN Pei-Yi. Nonvolatile Memory Characteristics with Embedded High Density Ruthenium Nanocrystals[J]. 中国物理快报, 2009, 26(5): 56104-056104.
MAO Ping, ZHANG Zhi-Gang, PAN Li-Yang, XU Jun, CHEN Pei-Yi. Nonvolatile Memory Characteristics with Embedded High Density Ruthenium Nanocrystals. Chin. Phys. Lett., 2009, 26(5): 56104-056104.
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