Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films
WANG Liang-Ji1, ZHANG Shu-Ming1, WANG Yu-Tian1, JIANG De-Sheng1, ZHU Jian-Jun1, ZHAO De-Gang1, LIU Zong-Shun1, WANG Hui1, SHI Yong-Sheng1, WANG Hai1, LIU Su-Ying1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films
WANG Liang-Ji1, ZHANG Shu-Ming1, WANG Yu-Tian1, JIANG De-Sheng1, ZHU Jian-Jun1, ZHAO De-Gang1, LIU Zong-Shun1, WANG Hui1, SHI Yong-Sheng1, WANG Hai1, LIU Su-Ying1, YANG Hui1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
摘要A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.
Abstract：A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.
WANG Liang-Ji;ZHANG Shu-Ming;WANG Yu-Tian;JIANG De-Sheng;ZHU Jian-Jun;ZHAO De-Gang;LIU Zong-Shun;WANG Hui;SHI Yong-Sheng;WANG Hai;LIU Su-Ying;YANG Hui;. Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films[J]. 中国物理快报, 2009, 26(7): 76104-076104.
WANG Liang-Ji, ZHANG Shu-Ming, WANG Yu-Tian, JIANG De-Sheng, ZHU Jian-Jun, ZHAO De-Gang, LIU Zong-Shun, WANG Hui, SHI Yong-Sheng, WANG Hai, LIU Su-Ying, YANG Hui,. Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films. Chin. Phys. Lett., 2009, 26(7): 76104-076104.
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2009, Vol. 26 
