Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures
WU Li-Hua1,2, ZHANG Xiao-Zhong1,2, ZHANG Xin1,2, WAN Cai-Hua1,2, GAO Xi-Li1,2, TAN Xin-Yu1,2, YUAN Jun3
1Key Laboratory of Advanced Materials of Education Ministry, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842National Center for Electron Microscopy (Beijing), Beijing 1000843Department of Physics, University of York, Heslington, York YO10 5DD, UK
Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures
WU Li-Hua1,2, ZHANG Xiao-Zhong1,2, ZHANG Xin1,2, WAN Cai-Hua1,2, GAO Xi-Li1,2, TAN Xin-Yu1,2, YUAN Jun3
1Key Laboratory of Advanced Materials of Education Ministry, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842National Center for Electron Microscopy (Beijing), Beijing 1000843Department of Physics, University of York, Heslington, York YO10 5DD, UK
摘要Fe-doped amorphous carbon films of about 100nm in thickness are deposited on n-type silicon substrates by pulsed laser deposition (PLD), and positive magnetoresistance (MR) is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the magnetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.
Abstract：Fe-doped amorphous carbon films of about 100nm in thickness are deposited on n-type silicon substrates by pulsed laser deposition (PLD), and positive magnetoresistance (MR) is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the magnetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.
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2009, Vol. 26 
