1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH (Royal Institute of Technology), Electrum 229, SE-164 40 Kista, Sweden
Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH (Royal Institute of Technology), Electrum 229, SE-164 40 Kista, Sweden
摘要An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9V for ±12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100μs program/erase at a low voltage of ±7V, which is due to fast charge injection rates, i.e., about 2.4×1016cm-2s-1 for electrons and 1.9×1016cm-2s-1 for holes.
Abstract：An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9V for ±12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100μs program/erase at a low voltage of ±7V, which is due to fast charge injection rates, i.e., about 2.4×1016cm-2s-1 for electrons and 1.9×1016cm-2s-1 for holes.
[1] White M H, Adams D A, and Bu J K 2000 IEEE CircuitsDevices Mag. 16 22 [2] Lee J J, and Kwong D L 2005 IEEE Trans. Electron.Devices 52 507 [3] Hanafi H L, Tiwari S, and Khan I 1996 IEEE Trans.Electron. Devices 43 1553 [4] Liu Z, Lee C, Narayanan V, Pei G, and Kan E C 2002 IEEE Trans. Electron. Devices 49 1606 [5] Govoreanu B, Blomme P, Rosmeulen M, and Houdt J V 2003 IEEE Electron. Device Lett. 24 99 [6] Irrera F 2006 IEEE Trans. Electron. Devices 532418 [7] Seol K S, Choi S J, Choi J Y, Jang E J, Kim B K, Park S J,Cha D G, Song I Y, Park J B and Choi S H 2006 Appl. Phys.Lett. 89 083109 [8] Punchaipetch P, Uraoka Y, Fuyuki T, Tomyo A, Takahashi E,Hayashi T, Sano A and Horii S 2006 Appl. Phys. Lett. 89093502 [9] Park S, Cha Y K, Cha D, Park Y, Yoo I. K, Lee J H, andSeol K S and Choi S H 2006 Appl. Phys. Lett. 89 033122 [10] Michaelson H B 1977 J. Appl. Phys. 48 4729. [11] Lee C, Kwon J H and Sohn B H 2007 Appl. Phys. Lett. 91 153506 [12] Cho M H, Roh Y S and Whang C N 2002 Appl. Phys.Lett. 81 1071 [13] Lee C, Hou T H and Kan E C 2005 IEEE Trans.Electron. Devices 52 2697 [14] Chen W, Liu W J, Zhang M, Ding S J, Zhang D W and Li M F2007 Appl. Phys. Lett. 91 022908
2009, Vol. 26 
