中国物理快报  2009, Vol. 26 Issue (8): 87802-087802    DOI: 10.1088/0256-307X/26/8/087802
  CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 本期目录 | 过刊浏览 | 高级检索 |
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
RUAN Jun1,2, YU Tong-Jun1, JIA Chuan-Yu1, TAO Ren-Chun1, WANG
Zhan-Guo2, ZHANG Guo-Yi1
1State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 1008712Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
RUAN Jun1,2, YU Tong-Jun1, JIA Chuan-Yu1, TAO Ren-Chun1, WANG
Zhan-Guo2, ZHANG Guo-Yi1
1State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 1008712Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083