High-Temperature Operation of 8.5μm Distributed Feedback Quantum Cascade Lasers
LI Yao-Yao, LI Ai-Zhen, WEI Lin, LI Hua, XU Gang-Yi, ZHANG Yong-Gang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
High-Temperature Operation of 8.5μm Distributed Feedback Quantum Cascade Lasers
LI Yao-Yao, LI Ai-Zhen, WEI Lin, LI Hua, XU Gang-Yi, ZHANG Yong-Gang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
摘要We present a distributed feedback quantum cascade laser (DFB-QCL) emitting at a wavelength of 8.5μm and operating up to 420K (147°C) with a low-threshold current density in pulsed mode. The DFB-QCLs studied are based on a four-well active design; the central portion of the waveguide consists of 60 periods of lattice matched InP-based InGaAs/AlInAs. In the design of the device, an active structure with lower doping and a deep-top grating process are utilized to achieve high temperature operation with a lower-threshold current density. At 420K, a low-threshold current density of 3.28kA/cm2 and a single mode peak power of 15mW are achieved on an epilayer-up mounting device with ridge width of 26μm and cavity length of 3.0mm. A side mode suppression ratio of 25dB at 420K is obtained.
Abstract：We present a distributed feedback quantum cascade laser (DFB-QCL) emitting at a wavelength of 8.5μm and operating up to 420K (147°C) with a low-threshold current density in pulsed mode. The DFB-QCLs studied are based on a four-well active design; the central portion of the waveguide consists of 60 periods of lattice matched InP-based InGaAs/AlInAs. In the design of the device, an active structure with lower doping and a deep-top grating process are utilized to achieve high temperature operation with a lower-threshold current density. At 420K, a low-threshold current density of 3.28kA/cm2 and a single mode peak power of 15mW are achieved on an epilayer-up mounting device with ridge width of 26μm and cavity length of 3.0mm. A side mode suppression ratio of 25dB at 420K is obtained.
[1] Faist J, Capasso F, Sivco D L, Sirtro C, Hutchinson A Land Cho A Y 1994 Science 264 553 [2] Bakhirkin Y A, Kosterev A A, Curl R F, Tittel F K, YarekhaD A, Hvozdara L, Giovannini and Faist J 2006 Appl. Phys. B 82 149 [3] Kosterev A A and Tittel F K 2002 IEEE J. Quantum.Electron. 38 582 [4] Evans A, Yu J S, David J, Doris L, Mi K, Slivken S andRazeghi M 2004 Appl. Phys. Lett. 84 314 [5] Tahraoui A, Matlis A, Slivken S, Diaz J and Razeghi M 2001 Appl. Phys. Lett. 78 416 [6] Gmachl C, Tredicucci A, Capasso F, Hutchinson A L, Sivco DL, Sergent A M, Mentzel T and Cho A Y 2000 Electron. Lett. 36 723 [7] Yu J S, Slivken S, Darvish S R, Evans A, Gokden B andRazeghi M 2005 Appl. Phys. Lett. 87 041104 [8] Hofstetter D, Beck M, Aellen T and Faist J 2001 Appl.Phys. Lett. 78 396 [9] Beck M, Hofstetter D, Aellen T, Faist J, Oesterle U,Ilegems M, Gini E and Melchior H 2002 Science 295 301 [10] Kohler R, Gmachl C, Tredicucci A, Capasso F, Sivco D L,Chu S N G and Cho A Y 2000 Appl, Phys. Lett. 76 1092 [11] Li A Z, Xu G Y, Zhang Y G, Li H and Zhang X 2005 J.Crystal Growth 278 770
2009, Vol. 26 
