In/Pd-Doped SnO2-Based CO Micro-Structure Sensor with High Sensitivity and Quick Response
LIU Li1,2, ZHANG Tong1, LI Shou-Chun2, WANG Lian-Yuan2, FAN Hui-Tao1, LI Wei2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122College of Physics, Jilin University, Changchun 130012
In/Pd-Doped SnO2-Based CO Micro-Structure Sensor with High Sensitivity and Quick Response
LIU Li1,2, ZHANG Tong1, LI Shou-Chun2, WANG Lian-Yuan2, FAN Hui-Tao1, LI Wei2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122College of Physics, Jilin University, Changchun 130012
摘要In/Pd-doped SnO2 is synthesized via a sol-gel method and coated on a silicon substrate with Pt electrodes to fabricate a micro-structure sensor. The sensor can be used to detect CO down to 1ppm (the sensitivity is about 3), and the response time and recovery time are about 5 and 15s, respectively. Excellent selectivity is also found based on our sensor. These results demonstrate a promising approach to fabricate high-performance CO sensors with high sensitivity and quick response.
Abstract：In/Pd-doped SnO2 is synthesized via a sol-gel method and coated on a silicon substrate with Pt electrodes to fabricate a micro-structure sensor. The sensor can be used to detect CO down to 1ppm (the sensitivity is about 3), and the response time and recovery time are about 5 and 15s, respectively. Excellent selectivity is also found based on our sensor. These results demonstrate a promising approach to fabricate high-performance CO sensors with high sensitivity and quick response.
LIU Li;ZHANG Tong;LI Shou-Chun;WANG Lian-Yuan;FAN Hui-Tao;LI Wei. In/Pd-Doped SnO2-Based CO Micro-Structure Sensor with High Sensitivity and Quick Response[J]. 中国物理快报, 2009, 26(10): 100702-100702.
LIU Li, ZHANG Tong, LI Shou-Chun, WANG Lian-Yuan, FAN Hui-Tao, LI Wei. In/Pd-Doped SnO2-Based CO Micro-Structure Sensor with High Sensitivity and Quick Response. Chin. Phys. Lett., 2009, 26(10): 100702-100702.
[1] Janata J, Josowicz M and Michael-Devaney D 1994 Anal.Chem. 66 207 [2] Zhang Y G, Gu Y, Zhang X J, Li A Z and Tian Z B 2008 Chin. Phys. Lett. 25 3246 [3] Sang X Z, Yu C X, Yan B B, Ma J X, Meng Z F,Mayteevarunyoo T and Lu N G 2008 Chin. Phys. Lett. 233202 [4] Wang X H, Wang X L, Feng C, Xiao H L, Yang C B, Wang J X,Wang B Z, Ran J X and Wang C M 2008 Chin. Phys. Lett. 25266 [5] Li K, Liu H, Zhang Q C, Xue C G and Wu X P 2007 Chin.Phys. Lett. 24 1502 [6] Huang J T, Huang X g and Zhao H W 2008 Chin. Phys.Lett. 25 1329 [7] Feng C, Wang X L, Yang C B, Xiao H L, Zhang M L, Jiang LJ, Tang J, Hu G X, Wang J X and Wang Z G 2008 Chin. Phys.Lett. 25 3205 [8] Qiu C J, Dou Y W, Zhao Q L, Qu W, Yuan J, Sun Y M and CaoM S 2008 Chin. Phys. Lett. 25 3590 [9] Alireza K 2009 Chin. Phys. Lett. 26 060701 [10] Li M, Wang M, Rong H and Li H P 2006 Chin. Phys.Lett. 23 1211 [11] Sui X H, Pei W H, Zhang R X, Lu L and Chen H D 2006 Chin. Phys. Lett. 23 1932 [12] Lin K Q, Wei L M, Zhang D G, Zheng R S, Wang P, Lu Y Hand Ming H 2007 Chin. Phys. Lett. 24 3081 [13] Xin Z G, Lu Y H, Wang P, Lin K Q, Yan J and Ming H 2008 Chin. Phys. Lett. 25 4473 [14] Wang S, Wang Z, Liu X and Zhang L 2008 SensorsActuators B 131 318 [15] Liu Y, Koep E and Liu M 2005 Chem. Mater. 173997 [16] Zhang T, Qi Q, Liu K X, Liu L, Zhang L and Xu B K 2006 Trans. Nonferrous Met. Soc. Chin. 16 780 [17] Wan Q, Li Q H, Chen Y J, Wang T H, He X L, Li J P and LinC L 2004 Appl. Phys. Lett. 84 3654 [18] Chen Y C, Chang Y H, Chen G J, Chai Y L and Ray D T 2003 Sensors Actuators B 96 82 [19] Yang H, Zhang X and Tang A 2006 Nanotechnology 17 2860 [20] Vaishampayan M V, Deshmukh R G and Mulla I S 2008 Sensors Actuators B 131 665 [21] Franke M E, Koplin T J and Simon U 2006 Small 2 36
2009, Vol. 26 
