摘要Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300°C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5×10-4Ω・cm is obtained from the film annealed at 400°C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.
Abstract：Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300°C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5×10-4Ω・cm is obtained from the film annealed at 400°C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.
(Optical properties of bulk materials and thin films)
引用本文:
CAO Feng;WANG Yi-Ding;YIN Jing-Zhi;CONG Meng-Long;HAN Liang-Yu. Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films[J]. 中国物理快报, 2009, 26(11): 114203-114203.
CAO Feng, WANG Yi-Ding, YIN Jing-Zhi, CONG Meng-Long, HAN Liang-Yu. Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films. Chin. Phys. Lett., 2009, 26(11): 114203-114203.
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