Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure
AN Yu-Peng1, YANG Hua2, MEI Ting2, WANG Yi-Ding1, TENG Jing-Hua3, XU Cheng-Dong2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 6397983Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure
AN Yu-Peng1, YANG Hua2, MEI Ting2, WANG Yi-Ding1, TENG Jing-Hua3, XU Cheng-Dong2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 6397983Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
摘要Quantum well intermixing (QWI) by the impurity-free vacancy disordering (IFVD) technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum well structures. We experimentally investigate the influence of the capping layer SiO2 and Si3N4 on the QWI by IFVD. The results show that for all the samples with three-types differently doped (P, N and I) top InP layers, Si3N4 can always induce a larger photoluminescence blueshift than SiO2 in the IFVD QWI process, which attributes more to the group III and V vacancies point defects created in the interface of Si3N4-InP than that of SiO2-InP, proved by the SIMS measurements. The inherent mechanisms for explaining these properties are further discussed.
Abstract：Quantum well intermixing (QWI) by the impurity-free vacancy disordering (IFVD) technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum well structures. We experimentally investigate the influence of the capping layer SiO2 and Si3N4 on the QWI by IFVD. The results show that for all the samples with three-types differently doped (P, N and I) top InP layers, Si3N4 can always induce a larger photoluminescence blueshift than SiO2 in the IFVD QWI process, which attributes more to the group III and V vacancies point defects created in the interface of Si3N4-InP than that of SiO2-InP, proved by the SIMS measurements. The inherent mechanisms for explaining these properties are further discussed.
AN Yu-Peng;YANG Hua;MEI Ting;WANG Yi-Ding;TENG Jing-Hua;XU Cheng-Dong. Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure[J]. 中国物理快报, 2010, 27(1): 17302-017302.
AN Yu-Peng, YANG Hua, MEI Ting, WANG Yi-Ding, TENG Jing-Hua, XU Cheng-Dong. Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure. Chin. Phys. Lett., 2010, 27(1): 17302-017302.
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2010, Vol. 27 
