Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering
GAO Xiao-Yong1,2, FENG Hong-Liang1, ZHANG Zeng-Yuan1, MA Jiao-Min1, LU Jing-Xiao1
1The Key Laboratory of Materials Physics (Ministry of Education), Zhengzhou University, Zhengzhou 4500522School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052
Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering
GAO Xiao-Yong1,2, FENG Hong-Liang1, ZHANG Zeng-Yuan1, MA Jiao-Min1, LU Jing-Xiao1
1The Key Laboratory of Materials Physics (Ministry of Education), Zhengzhou University, Zhengzhou 4500522School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052
摘要(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.
Abstract：(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
引用本文:
GAO Xiao-Yong;FENG Hong-Liang;ZHANG Zeng-Yuan;MA Jiao-Min;LU Jing-Xiao. Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering[J]. 中国物理快报, 2010, 27(2): 26804-026804.
GAO Xiao-Yong, FENG Hong-Liang, ZHANG Zeng-Yuan, MA Jiao-Min, LU Jing-Xiao. Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering. Chin. Phys. Lett., 2010, 27(2): 26804-026804.
[1] Kotz R and Yeager E 1980 J. Electroanal. Chem. 111 105 [2] Varkey A J and Fort A F 1993 Sol. Energy Mater. Sol. Cells 29 253 [3] Hou S M, Ouyang M, Chen H F, Liu W M, Xue Z Q, Wu Q D, Zhang H X, Gao H J and Pang S J 1998 Thin Solid Films 315 322 [4] Passaniti J and Megahed S A 1995 Handbook of Batteries (New York: McGraw-Hill) p 122 [5] Smith D F, Graybill G R, Grubbs R K and Gucinskl J A 1997 J. Power Sources 65 47 [6] B\"{uchel D, Mihalcea C, Fukaya T, Atoda N, Tominaga J, Kikukawa T and Fuji H 2001 Appl. Phys. Lett. 79 620 [7] Tominaga J 2003 J. Phys: Condens. Matt. 15 R1101 [8] Tominaga J, Nakano T and Atoda N 1992 Extended Abstracts of the 39th Spring Meeting of the Japan Society of Applied Physics and Related Societies (Narashino) p 30 [9] Tominaga J, Nakano T and Atoda N 1998 Appl. Phys. Lett. 73 2078 [10] Fukaya T, Tominaga J, Nakano T and Atoda N 1999 Appl. Phys. Lett. 75 3114 [11] Cai D P and Wei C L 2000 Appl. Phys. Lett. 77 1413 [12] Fuji H, Tominaga J, Men L, Nakano T, Katayama H and Atoda N 2000 Jpn. J. Appl. Phys. 39 980 [13] Peyser L A, Vinson A E, Bartko A P and Dickson R M 2001 Science 291 103 [14] Zhang X Y, Pan X Y, Zhang Q F, Xu B X, Jiang H B, Liu C L, Gong Q H and Wu J L 2003 Acta Phys. Chim. Sin. 19 203 [15] Chiu Y, Rambabu U, Hsu M H, Shieh H P D, Chen C Y and Lin H H 2003 J. Appl. Phys. 94 1996 [16] Kim J, Fuji H, Yamakama Y, Nakano T, B\"{uchel D, Tominaga J and Atoda N 2001 Jpn. J. Appl. Phys. 40 1634 [17] Gao X Y, Wang S Y, Li J, Zheng Y X, Zhang R J, Zhou P, Yang Y M and Chen L Y 2004 Thin Solid Films 455--456 438 [18] Qiu J H, Zhou P, Gao X Y, Yu J N, Wang S Y, Li J, Zheng Y X, Yang Y M, Song Q H and Chen L Y 2005 J. Korean Phys. Soc. 46 S269 [19] Chuang H J and Ko H W 1989 Proc. Natl. Sci. Counc. Roc. A 13 145 [20] Gao X Y, Liu X W, Wang S Y, Liu Y F, Lin Q G and Lu J X 2008 Chin. Phys. Lett. 25 1449 [21] Gao X Y, Li R, Chen Y S, Lu J X, Liu P, Feng T H, Wang H J and Yang S E 2006 Acta Phys. Sin. 55 98 (in Chinese) [22] Bonnel M, Duhumel N, Guendouz M, Haji L, Loisel B and Ruault P 1991 Jpn. J. Appl. Phys. 30 1924 [23] Kakkad R, Smith J, Lau W S, Fonash S J and Kerns R 1989 J. Appl. Phys. 65 2069 [24] Singh R, Fakhraddin M and Poole K F 2000 Appl. Sur. Sci. 168 198
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