1Key Laboratory of Advanced Materials (Ministry of Education), Superconductivity R&D Center (SRDC), Southwest Jiaotong University, Chengdu 6100312School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW, Australia
Effects of Substitution of Sm for Bi in BiFeO3 Thin Films Prepared by the Sol-Gel Method
1Key Laboratory of Advanced Materials (Ministry of Education), Superconductivity R&D Center (SRDC), Southwest Jiaotong University, Chengdu 6100312School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW, Australia
摘要Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si(100) substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.
Abstract：Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si(100) substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
引用本文:
HUANG Ning-Xiang;ZHAO Li-Feng;XU Jia-Yang;CHEN Ji-Li;ZHAO Yong;. Effects of Substitution of Sm for Bi in BiFeO3 Thin Films Prepared by the Sol-Gel Method[J]. 中国物理快报, 2010, 27(2): 27704-027704.
HUANG Ning-Xiang, ZHAO Li-Feng, XU Jia-Yang, CHEN Ji-Li, ZHAO Yong,. Effects of Substitution of Sm for Bi in BiFeO3 Thin Films Prepared by the Sol-Gel Method. Chin. Phys. Lett., 2010, 27(2): 27704-027704.
[1] Schmid H 1994 Ferroelectrics 162 317 [2] Wang J et a1 2003 Science 299 1719 [3] dos Santos A M et al 2002 Solid State Commun. 122 49 [4] Wu Y Y et al 2008 Chin. Phys. Lett. 25 4131 [5] Li J J et al 2009 Chin. Phys. Lett. 26 047702 [6] Van Aken B B et al 2004 Nature Materials 3 164 [7] Lee D et a1 2005 Appl. Phys. Lett. 86 222903 [8] Fischer P et a1 1980 J. Phys. C 13 1931 [9] Singh S K and Ishiwara H 2006 Appl. Phys. Lett. 88 262908 [10] Teague J R, Gerson R and James W J 1970 Solid State Commun. 8 1073 [11] Wang Y P et al 2004 Appl. Phys. Lett. 84 1731 [12] Ruette B et al 2004 Phys. Rev. B 69 064114 [13] Cheng C J et al 2009 Phys. Rev. B 80 014109 [14] Miyazaki H et a1 2004 J. Eur. Ceramic Soc. 24 1005 [15] Nalwa K S, Garg A and Upadhyaya A 2008 Mater. Lett. 62 878 [16] Lin Y H et al 2007 Appl. Phys. Lett. 90 172507 [17] Liu H R et a1 2007 Physica B 400 252 [18] Lee Y H, Wu J M and Lai C H 2006 Appl. Phys. Lett. 88 042903 [19] Liu H R, Yan B W and Wang X Z 2008 J. Crystal Growth 310 2934 [20] Zhang Y et a1 2008 Appl. Surf. Sci. 254 6762 [21] Clark S J and Robertson J 2007 Appl. Phys. Lett. 90 132903 [22] Zheng L R et al 1997 Sci. Chin. E 40 126 [23] Qi X D et a1 2005 Appl. Phys. Lett. 86 062903 [24] Shu H B et a1 2007 J. Phys.: Condens. Matter 19 276213
2010, Vol. 27 
