A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays
ZHOU Ya-Ting1,2**, SHI Yue-Chun1, LI Si-Min1, LIU Sheng-Chun1, CHEN Xiang-Fei1**
1 Microwave-Photonics Technology Laboratory, Nanjing National Laboratory of Microstructures, School of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 2 Changzhou Institute of Technology, Changzhou 213002
A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays
ZHOU Ya-Ting1,2**, SHI Yue-Chun1, LI Si-Min1, LIU Sheng-Chun1, CHEN Xiang-Fei1**
1 Microwave-Photonics Technology Laboratory, Nanjing National Laboratory of Microstructures, School of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 2 Changzhou Institute of Technology, Changzhou 213002
摘要A method used to introduce an arbitrary equivalent-phase-shift (EPS) into an asymmetric sampled Bragg grating (SBG) is reported. Under the same structural parameters except for the sampling pattern, the asymmetric SBG offers better performance than that of a normal SBG structure for keeping single-longitudinal-mode (SLM) operation. This is because the proposed sampling pattern can suppress the 0th-order light resonance due to the mismatch between the two different grating sections along the whole SBG. This method can be used to design and fabricate semiconductor lasers and multiwavelength laser arrays (MLAs) with the required EPS at high yield and low cost.
Abstract:A method used to introduce an arbitrary equivalent-phase-shift (EPS) into an asymmetric sampled Bragg grating (SBG) is reported. Under the same structural parameters except for the sampling pattern, the asymmetric SBG offers better performance than that of a normal SBG structure for keeping single-longitudinal-mode (SLM) operation. This is because the proposed sampling pattern can suppress the 0th-order light resonance due to the mismatch between the two different grating sections along the whole SBG. This method can be used to design and fabricate semiconductor lasers and multiwavelength laser arrays (MLAs) with the required EPS at high yield and low cost.
ZHOU Ya-Ting;**;SHI Yue-Chun;LI Si-Min;LIU Sheng-Chun;CHEN Xiang-Fei**
. A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays[J]. 中国物理快报, 2011, 28(7): 74207-074207.
ZHOU Ya-Ting, **, SHI Yue-Chun, LI Si-Min, LIU Sheng-Chun, CHEN Xiang-Fei**
. A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays. Chin. Phys. Lett., 2011, 28(7): 74207-074207.
[1] Fan W, Chen B, Li X, Chen L and Lin Z 2002 Opt. Commun. 204 157
[2] Huang Y, Sato K, Okuda T, Suzuki N, Ae S, Muroya Y, Mori K, Sasaki T and Kobayashi K 2002 IEEE J. Quantum Electron. 38 1479
[3] Tennant D M, Koch T L, Verdiell J M, Feder K, Gnall R P, Koren U, Young M G, Miller B I, Newkirk M A and Tell B 1993 J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 11 2509
[4] Dai Y and Chen X 2007 Opt. Express 15 2348
[5] Zhou Y, Shi Y, Li S, Liu S and Chen X 2010 Opt. Lett. 35 3123
[6] Dai Y and Yao J 2008 IEEE J. Quantum Electron. 44 938
[7] Makino T 1991 IEEE J. Quantum Electron. 27 2404
[8] Govind P A and Andrew H B 1988 IEEE J. Quantum Electron. 24 2407