Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs
ZHU Bin1, HAN Qin1, YANG Xiao-Hong1, NI Hai-Qiao2, HE Ji-Fang2, NIU Zhi-Chuan2, WANG Xin1, WANG Xiu-Ping1, WANG Jie1
1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs
ZHU Bin1, HAN Qin1, YANG Xiao-Hong1, NI Hai-Qiao2, HE Ji-Fang2, NIU Zhi-Chuan2, WANG Xin1, WANG Xiu-Ping1, WANG Jie1
1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10-6 A/cm2 at 0 V bias and 2.24 × 10-4 A/cm2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.
Abstract：Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10-6 A/cm2 at 0 V bias and 2.24 × 10-4 A/cm2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.
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2010, Vol. 27 
