Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry
ZHANG Ji-Tao1, LI Yan1, LUO Zhi-Yong2, WU Xue-Jian1
1State Key Lab of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084 2National Institute of Metrology, Beijing 100013
Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry
ZHANG Ji-Tao1, LI Yan1, LUO Zhi-Yong2, WU Xue-Jian1
1State Key Lab of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084 2National Institute of Metrology, Beijing 100013
摘要One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2× 10-8.
Abstract：One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2× 10-8.
ZHANG Ji-Tao;LI Yan;LUO Zhi-Yong;WU Xue-Jian. Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry[J]. 中国物理快报, 2010, 27(5): 50601-050601.
ZHANG Ji-Tao, LI Yan, LUO Zhi-Yong, WU Xue-Jian. Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry. Chin. Phys. Lett., 2010, 27(5): 50601-050601.
[1] Becker P, Bièvre P D, Fujii K, Glaeser M, Inglis B, Luebbig H and Mana G 2007 Metrologia 44 1 [2] Becker P 2001 Rep. Prog. Phys. 64 1945 [3] Fujii K, Waseda A, Kuramoto N, Mizushima S, Becker P, Bettin H, Nicolaus A, Kuetgens U, Valkiers S, Taylor P, Bièvre P D, Mana G, Massa E, Matyi R, Kessler E G and Hanke M 2005 IEEE Trans. Instrum. Meas. 54 854 [4] Nicolaus R A and Fujii K 2006 Meas. Sci. Technol. 17 2527 [5] Fujii K, Tanaka M, Nezu Y, Nakayama K, Fujimoto H, Bièvre P D and Valkiers S 1999 Metrologia 36 455 [6] Becker P, Bettin H, Danzebrink H, Gläser M, Kuetgens U, Nicolaus A, Schiel D, Bièvre P D, Valkiers S and Taylor P 2003 Metrologia 40 271 [7] Kuramoto N and Fujii K 2003 IEEE Trans. Instrum. Meas. 52 631 [8] Kuramoto N, Fujii K, Azuma Y, Mizushima S and Toyoshima Y 2007 IEEE Trans. Instrum. Meas. 56 476 [9] Fujiwara H 2007 Spectroscopic Ellipsometry Principle and Applications (England: Wiley) p 81 [10] Horprathum M, Chindaudom P and Limsuwan P 2007 Chin. Phys. Lett. 24 1505 [11] Lin Q G, Gao X Y, Gu J H, Chen Y S, Yang S E and Lu J X 2008 Chin. Phys. Lett. 25 4223 [12] Collins J, Giardini W, Leistner A and Kenny M 1997 IEEE Trans. Instrum. Meas. 46 572 [13] Palik E D 1985 Handbook of Optical Constants of Solid (New York: Academic) p 547 [14] Aspnes D E 1982 Thin Solid Films 89 249 [15] Aspnes D E and Studna A A 1983 Phys. Rev. B 27 985 [16] Zhang J T, Li Y and Luo Z Y 2010 Acta Phys. Sin. 1 186 (in Chinese)
2010, Vol. 27 
