Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices
LIU Zhang-Li1,2**, HU Zhi-Yuan1,2, ZHANG Zheng-Xuan1, SHAO Hua, NING Bing-Xu1,2, BI Da-Wei1, CHEN Ming1,2, ZOU Shi-Chang1
1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate University of the Chinese Academy of Sciences, Beijing 100049
Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices
LIU Zhang-Li1,2**, HU Zhi-Yuan1,2, ZHANG Zheng-Xuan1, SHAO Hua, NING Bing-Xu1,2, BI Da-Wei1, CHEN Ming1,2, ZOU Shi-Chang1
1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate University of the Chinese Academy of Sciences, Beijing 100049
摘要Total ionizing dose effects of different transistor sizes in a 0.18 µm technology are studied by 60Co γ-ray irradiation. Significant threshold voltage shift is observed for the narrow channel devices, which is called the radiation induced narrow channel effect (RINCE). A charge sharing model is introduced to understand the phenomenon. The devices' characteristic degradations after irradiation, such as threshold voltage shift, increase in on-state current under different drain biases and substrate biases, are discussed in detail. Radiation induced oxide trapped charge at the edges of shallow trench isolation plays an important role in the RINCE. Narrow channel devices are susceptible to the total ionizing dose effect.
Abstract：Total ionizing dose effects of different transistor sizes in a 0.18 µm technology are studied by 60Co γ-ray irradiation. Significant threshold voltage shift is observed for the narrow channel devices, which is called the radiation induced narrow channel effect (RINCE). A charge sharing model is introduced to understand the phenomenon. The devices' characteristic degradations after irradiation, such as threshold voltage shift, increase in on-state current under different drain biases and substrate biases, are discussed in detail. Radiation induced oxide trapped charge at the edges of shallow trench isolation plays an important role in the RINCE. Narrow channel devices are susceptible to the total ionizing dose effect.
[1] Chen J Y, Henderson R C, Martin R and Patterson D O 1982 IEEE Trans. Nucl. Sci. 29 1681
[2] Chin M R and Ma T P 1983 Appl. Phys. Lett. 42 883
[3] Scarpulla J, Amram A L, Gin V W, Morse T C and Nakamura K T 1992 IEEE Trans. Nucl. Sci. 39 1990
[4] Wilson C L and Blue J L 1982 IEEE Trans. Nucl. Sci. 29 1676
[5] Shaneyfelt M R, Fleetwood D M, Winokur P S, Schwank J R and Meisenheimer T L 1993 IEEE Trans. Nucl. Sci. 40 1678
[6] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[7] Esqueda I S, Barnaby H J and Alles M L 2005 IEEE Trans. Nucl. Sci. 52 2259
[8] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M and Schrimpf R D 2008 Microelectron. Reliab. 48 1000
[9] Faccio F and Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[10] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L and Ranieri A 2007 Nucl. Instrum. Methods Phys. Res. A 582 750
[11] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P and Ferlet-Cavrios V 2008 IEEE Trans. Nucl. Sci. 55 1833
[12] Ortiz-Conde A, Garcia Sanchez F J, Liou J J, Cerdeira A Estrada M and Yue Y 2002 Microelectron. Reliab. 42 583
[13] Cheng Y H and Hu C M 2004 MOSFET Modeling and BSIM3 User's Guide (Dordrecht: Kluwer Academic)
[14] Davis G E, Hughes H L and Kamins T I 1982 IEEE Trans. Nucl. Sci. 29 1685
2011, Vol. 28 
