摘要The anomalous phenomenon of generation current IGD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to IGD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.
Abstract：The anomalous phenomenon of generation current IGD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to IGD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.
MA Xiao-Hua;GAO Hai-Xia;CAO Yan-Rong;CHEN Hai-Feng;HAO Yue. The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's
[J]. 中国物理快报, 2010, 27(5): 57301-057301.
MA Xiao-Hua, GAO Hai-Xia, CAO Yan-Rong, CHEN Hai-Feng, HAO Yue. The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's
. Chin. Phys. Lett., 2010, 27(5): 57301-057301.
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2010, Vol. 27 
