Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes
ZHU Ji-Hong1, ZHANG Shu-Ming1, SUN Xian1, ZHAO De-Gang1, ZHU Jian-Jun1, LIU Zong-Shun1, JIANG De-Sheng1, DUAN Li-Hong1, WANG Hai1, SHI Yong-Sheng1, LIU Su-Ying1, YANG Hui 1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes
ZHU Ji-Hong1, ZHANG Shu-Ming1, SUN Xian1, ZHAO De-Gang1, ZHU Jian-Jun1, LIU Zong-Shun1, JIANG De-Sheng1, DUAN Li-Hong1, WANG Hai1, SHI Yong-Sheng1, LIU Su-Ying1, YANG Hui 1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
摘要InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl (HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
Abstract：InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl (HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
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2008, Vol. 25 
