摘要A dc magnetic sputtering process is applied to growth of a Mo back contact layer onto the flexible polyimide (PI) and rigid soda-lime glass (SLG) substrates. The structural and electrical properties of the Mo layer coated on the two kinds of substrates are investigated by x-ray diffraction (XRD) and Hall effect measurements. The results show that the Mo layer on SLG indicate more better crystal quality and lower resistivity than that on the PI sheets. In contrast to the SLG substrate, the resistivity of the Mo layer on PI is increased by the vacuum annealing process at the substrate temperature of 450°C under Se atmosphere, which is attributed to the cracked Mo layer induced by the mismatch of the coefficient of thermal expansion between PI and Mo material. The Cu(In,Ga)Se2 (CIGS) solar cells based on the PI and SLG substrates show the best conversion efficiencies of 8.16% and 10.98% (active area, 0.2cm2), respectively. The cell efficiency of flexible CIGS solar cells on PI is limited by its relatively lower fill factor caused by the Mo back contact.
Abstract：A dc magnetic sputtering process is applied to growth of a Mo back contact layer onto the flexible polyimide (PI) and rigid soda-lime glass (SLG) substrates. The structural and electrical properties of the Mo layer coated on the two kinds of substrates are investigated by x-ray diffraction (XRD) and Hall effect measurements. The results show that the Mo layer on SLG indicate more better crystal quality and lower resistivity than that on the PI sheets. In contrast to the SLG substrate, the resistivity of the Mo layer on PI is increased by the vacuum annealing process at the substrate temperature of 450°C under Se atmosphere, which is attributed to the cracked Mo layer induced by the mismatch of the coefficient of thermal expansion between PI and Mo material. The Cu(In,Ga)Se2 (CIGS) solar cells based on the PI and SLG substrates show the best conversion efficiencies of 8.16% and 10.98% (active area, 0.2cm2), respectively. The cell efficiency of flexible CIGS solar cells on PI is limited by its relatively lower fill factor caused by the Mo back contact.
ZHANG Li;HE Qing;JIANG Wei-long;LIU Fang-fang;LI Chang-Jian;SUN Yun. Mo Back Contact for Flexible Polyimide Substrate Cu(In, Ga)Se2 Thin-Film Solar Cells[J]. 中国物理快报, 2008, 25(9): 3452-3454.
ZHANG Li, HE Qing, JIANG Wei-long, LIU Fang-fang, LI Chang-Jian, SUN Yun. Mo Back Contact for Flexible Polyimide Substrate Cu(In, Ga)Se2 Thin-Film Solar Cells. Chin. Phys. Lett., 2008, 25(9): 3452-3454.
[1] Tiwari A. N, Krejci M, Haug F J and Zogg H 1999 Prog.Photovolt: Res. Appl. 7 393 [2] Yamaguchi M 1995 J. Appl. Phys 78 1476 [3] Gay R R 1997 Prog. Photovolt: Res. Appl. 5 337 [4] Birkmire R, Eser E, Fields S and Shafarman W 2005 Prog. Photovolt: Res. Appl. 13 141 [5] Br\'{emaud D, Rudmann D, Bilger G, Zogg H and Tiwari AN 2005 Proc. IEEE Photovoltaic Specialists Conference(Florida, USA 3--7 January 2005) p 223 [6] Repins I, Contreras M A, Egaas B, DeHart Clay, Scharf J,Perkins C L, To B and Noufi R 2008 Prog. Photovolt: Res. Appl 16 235 [7] Kessler F and Rudmann D 2004 Solar Energy 77685 [8] Orgassa K, Schock H W and Werner J H 2003 Thin SolidFilms 431-432 387 [9] Wada T, Kohara N, Nishiwaki S and Negami T 2001 ThinSolid Films 387 118 [10] Guill\'{en C and Herrero J 2003 Thin Solid Films 431-432 403 [11] Zhang L, He Q, Jiang W L, Li Ch J and Sun Y 2008 Chin. Phys. Lett 25 734 [12] Zhang L, Sun Y, He Q, Xu CH M, Xiao J P, Xue Y M and Li CJ 2006 Acta Energiea Sol. Sin. 27 895 (in Chinese)
2008, Vol. 25 
