摘要A simple dip-stick type uniaxial stress actuator for ac-susceptibility measurement is designed. Target pressure can be achieved by smooth and continues work carried out using a combination of light weight micrometer and spring. The magnitude of the pressure is directly calculated from the force constant of the spring and the surface area of the sample. Benchmark on the quality of the data under uniaxial pressure is confirmed by the Piezo resistance measurements on [100] oriented n-type Si. The system is examined and calibrated with the standard paramagnetic Gd2O3. Further, the device performance, generation of constant uniaxial pressure against temperature variations, is assured by investigating the ac-magnetic susceptibility measurements on highly anisotropic La1.25Sr1.75Mn2O7 bilayer single crystal.
Abstract:A simple dip-stick type uniaxial stress actuator for ac-susceptibility measurement is designed. Target pressure can be achieved by smooth and continues work carried out using a combination of light weight micrometer and spring. The magnitude of the pressure is directly calculated from the force constant of the spring and the surface area of the sample. Benchmark on the quality of the data under uniaxial pressure is confirmed by the Piezo resistance measurements on [100] oriented n-type Si. The system is examined and calibrated with the standard paramagnetic Gd2O3. Further, the device performance, generation of constant uniaxial pressure against temperature variations, is assured by investigating the ac-magnetic susceptibility measurements on highly anisotropic La1.25Sr1.75Mn2O7 bilayer single crystal.
[1] Asamitsu A, Moritomo Y, Tomioka Y, Arima T and Tokura Y1995 Nature 73 407 [2] Ikeda S I, Shirakawa N, Yanagisawa T, Yoshida Y, KoikegameS, Koike S, Kosaka M and Uwatoko Y 2004 J. Phys. Soc. Jpn. 73 1322 [3] Millis A J, Darling T and Migliori A 1998 J. Appl.Phys. 83 1588 [4] Grigera S A, Rerry R S, Schofield A J, Chiao M, Julian SR, Lonzarich G G, Ikeda S I, Maeno Y, Millis A J and Mackenzie A P2001 Science 294 329 [5] Markovich V, Fita I, Puzniak R, Wisniewski A, Suzuki K,Cochrane J W, Yuzhelevskii Y, Mukovskii Ya M and Gorodetsky G 2005 Phys. Rev. B 71 224409 [6] Hains J, Leger J M, Gorelli F, Klug D D, Tse J S and Li ZQ 2001 Phys. Rev. B 64 134110 [7] Japel S, Schwager B, Boehler R and Ross M 2005 Phys.Rev. Lett. 95 167801 [8] Arumugam S, Mydeen K, Manivannan N, Kumaresa Vanji M,Prabhakaran D, Boothroyd A T, Sharma R K and Mandal P 2006 Phys. Rev. B 73 212412 [9] Hartshorn L 1925 J. Sci. Instrum. 2 145 [10] Prasad M, Rao R R and Ray Chaudhuri A K 1986 J.Phys. E 19 1013 [11] Deutz A F, Hulstman R and Kranenburg F J 1989 Rev.Sci. Instrum. 60 113 [12] Banerjee A, Rastogi A K, Kumar M, Das A, Mitra A andMajumdar A K 1989 J. Phys. E 22 230 [13] Bajpai A and Banerjee A 1997 Rev. Sci. Instrum. 68 4075 [14] Welp U, Grimsditch M, Fleshler S, Nessel W, Downey J,Crabtree G W and Guimpel J 1992 Phys. Rev. Lett. 69 2130 [15] Ludwig H A, Quenzel R, Schlachter S I, Hornung F W, GrubeK, Fietz W H and Wolf T 1996 J. Low Temp. Phys. 105 1385 [16] Arumugam S, Manivannan N and Murugeshwari M 2007 Rev. Sci. Instrum. 78 063906 [17] Rama N, Sankaranarayanan V and Ramachandra Rao M S 2006 J. Appl. Phys. 99 08Q315 [18] Mydeen K, Arumugam S, Prabahakaran D, Yu R C and Jin C Q J. Alloy. Compd. 17354 (inpress). [19] Arumugam S, Mydeen K, Kumaresa Vanji M and Mori M 2005 Rev. Sci. Instrum. 76 083904 [20] Prabhakaran D and Boothroyd A T 2003 J. Mater. Sci.:Mater. Electron. 14 587 [21] Argyriou D N, Mitchell J F, Goodenough J B, Chmaissem O,Short S and Jorgensen J D 1997 Phys. Rev. Lett. 78 1568 [22] Kamenev K V, Lees M R, Balakrishnan G, McK. Paul D,Marshall W G, Tissen V G and Nefedova M V 2000 Phys. Rev.Lett. 84 2710 [23] Gukasov A, Fangwei Wang, Anighoefer B, Lunhua He,Suryanarayanan R and Revcolevschi A2005 Phys. Rev. B 72092402