Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride
Substrate by Hot-Filament Chemical Vapour Deposition
JIN Zengsun, LU Xianyi, ZOU Guangtian
State Key Laboratory of Superhard Material, Jilin University, Changchun 130023
Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride
Substrate by Hot-Filament Chemical Vapour Deposition
JIN Zengsun;LU Xianyi;ZOU Guangtian
State Key Laboratory of Superhard Material, Jilin University, Changchun 130023
关键词 ：
81.15.Gh ,
68.55.Ce
Abstract ： Diamond films have been grown on high pressure synthesized cubic boron nitride (c-BN) particles by hot-filament chemical vapor deposition method, and heteroepitaxial diamond films on the c-BN (100) facets with no-evident defects were obtained, but polycrystalline diamond films were formed only on the c-BN (111) facets.
Key words ：
81.15.Gh
68.55.Ce
出版日期: 1995-02-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.Ce
引用本文:
JIN Zengsun;LU Xianyi;ZOU Guangtian. Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride
Substrate by Hot-Filament Chemical Vapour Deposition
[J]. 中国物理快报, 1995, 12(2): 120-122.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I2/120
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