Low Threshold and High Efficiency Nd:S-VAP Laser
ZHAO Shengzhi, WANG Qingpu, ZHANG Xingyu, WANG Xiaojie, WANG Xiangtai1 , SUN Lianke2 , ZHANG Shaojun2
Department of Optics, Shandong University, Ji nan 250100
1 Department of Physics, Shandong Normal University, Ji nan 250002
2 Institute of Crystal Materials, Shandong University, Ji nan 250100
Low Threshold and High Efficiency Nd:S-VAP Laser
ZHAO Shengzhi;WANG Qingpu;ZHANG Xingyu;WANG Xiaojie;WANG Xiangtai1 ;SUN Lianke2 ;ZHANG Shaojun2
Department of Optics, Shandong University, Ji nan 250100
1 Department of Physics, Shandong Normal University, Ji nan 250002
2 Institute of Crystal Materials, Shandong University, Ji nan 250100
关键词 :
42.55.Rz ,
42.60.Lh ,
32.80.Bx
Abstract : The absorption spectrum of a new sort of crystal Nd:S-VAP was measured, which showed that Nd:S-VAP can be appropriately pumped at 583.0 and 809.0nm. By using tunable dye-laser (570.0-600.0nm) as pumping light, the performance of low threshold and high efficiency Nd:S-VAP laser has been realized. The characteristics of the output laser, such as 1.5nm linewidth, 5 ns pulse width, almost total polarity, up to 50% conversion efficiency, down to 2mJ threshold energy and so on, were presented. Meanwhile, the prospect of Nd:S-VAP crystal for low threshold, high efficiency miniature laser was discussed.
Key words :
42.55.Rz
42.60.Lh
32.80.Bx
出版日期: 1995-06-01
:
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
42.60.Lh
(Efficiency, stability, gain, and other operational parameters)
32.80.Bx
引用本文:
ZHAO Shengzhi;WANG Qingpu;ZHANG Xingyu;WANG Xiaojie;WANG Xiangtai;SUN Lianke;ZHANG Shaojun. Low Threshold and High Efficiency Nd:S-VAP Laser[J]. 中国物理快报, 1995, 12(6): 355-357.
ZHAO Shengzhi, WANG Qingpu, ZHANG Xingyu, WANG Xiaojie, WANG Xiangtai, SUN Lianke, ZHANG Shaojun. Low Threshold and High Efficiency Nd:S-VAP Laser. Chin. Phys. Lett., 1995, 12(6): 355-357.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I6/355
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