Light Emission Excited by Schottky Hot Electrons in A1-MgF2 -Au( Cu) Thin-Film Devices
JIANG Mengshu, WEI Qinghua, SHU Qiqing* , ZHENG Keqin*
Department of Physics, Yuzhou University, Chongqing 630033
* Department of Applied Physics, Chongqing University, Chongqing 630044
Light Emission Excited by Schottky Hot Electrons in A1-MgF2 -Au( Cu) Thin-Film Devices
JIANG Mengshu;WEI Qinghua;SHU Qiqing* ;ZHENG Keqin*
Department of Physics, Yuzhou University, Chongqing 630033
* Department of Applied Physics, Chongqing University, Chongqing 630044
关键词 ：
73.40.Gk ,
68.55.Gi
Abstract ： A new type of light-emitting device with Al-MgF2 -Au(Cu) junction and the role of residual O2 in fabrication of Al-MgF2 -Au(Cu) thin film devices were reported in our other papers. In this paper, we made a further careful investigation about its current-voltage (I - V), current-temperature (I - T) characteristics and the observed light emission spectra in detail. We find the presence of Schottky high field emission in an evaporated sandwich structure of Al-MgF2 -Au(Cu) junctions, and argue that the radiation process is mainly due to Schottky hot electrons, which excite surface plasmon-polariton (SPP), then SPP couples to external radiation through surface roughness.
Key words ：
73.40.Gk
68.55.Gi
出版日期: 1995-05-01
引用本文:
JIANG Mengshu;WEI Qinghua;SHU Qiqing*;ZHENG Keqin*. Light Emission Excited by Schottky Hot Electrons in A1-MgF2 -Au( Cu) Thin-Film Devices[J]. 中国物理快报, 1995, 12(5): 305-308.
2 -Au( Cu) Thin-Film Devices. Chin. Phys. Lett., 1995, 12(5): 305-308.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I5/305
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