Calculation of the Orientational Phase Transition Temperature in Solid C60
XIN Houwen, YANG Lingfa, OUYANG Lizhi
Department of Chemical Physics, University of Science and Technology of China, Hefei 230026
Calculation of the Orientational Phase Transition Temperature in Solid C60
XIN Houwen;YANG Lingfa;OUYANG Lizhi
Department of Chemical Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
64.60.Cn ,
61.50.–f ,
81.30.Hd
Abstract ： A method is developed to describe the orientationel phase transition in solid C60 , considering both Lennard-Jones atomic pair potentials and Coulombic forces. We obtained the active mode while the transition occurs, and the calculated transition temperature agrees with experiments.
Key words ：
64.60.Cn
61.50.–f
81.30.Hd
出版日期: 1995-08-01
:
64.60.Cn
(Order-disorder transformations)
61.50.–f
81.30.Hd
(Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder)
引用本文:
XIN Houwen;YANG Lingfa;OUYANG Lizhi. Calculation of the Orientational Phase Transition Temperature in Solid C60 [J]. 中国物理快报, 1995, 12(8): 473-476.
60 . Chin. Phys. Lett., 1995, 12(8): 473-476.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I8/473
[1]
N. Seferoglu;A. Özkan;B. Kutlu. Finite Size Effect for the First-Order Phase Transition of the Three-Dimensional Blume--Capel Model on a Cellular Automaton
[2]
Raid A. Ismail;Kadhim A. Hubeatir;Abdullah K. Abass. Amorphous/Crystalline (n-n) Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique
[3]
SHI Qing-Fan;SUN Gang;HOU Mei-Ying;LU Kun-Quan. Segregation in Vertically Vibrated Binary Granular Mixtures with Same Size
[4]
QIAO Bao-Wei;FENG Jie;LAI Yun-Feng;LING Yun;LIN Yin-Yin;TANG Ting-Ao;CAI Bing-Chu;CHEN Bomy. Improvement of Electrical Properties of the Ge2 Sb2 Te5 Film by Doping Si for Phase-Change Random Access Memory
[5]
CHU Zhong;CHEN Zheng;WANG Yong-Xin;LU Yan-Li;ZHANG Jian-Jun. Microscopic Phase-Field Simulation of Atom Substitution Behaviour in Ni--Cr--Al Alloy
[6]
ZHANG Ting;LIU Bo;SONG Zhi-Tang;LIU Wei-Li;FENG Song-Lin;CHEN Bomy. Phase Transition Phenomena in Ultra-Thin Ge2 Sb2 Te5 Film
[7]
ZHANG Xue-Ru. Identification of Ag37 Sn33 Te30 Phase-Change Films for Optical Data Storage
[8]
YANG Chun-Xia;ZHOU Tao;ZHOU Pei-Ling;LIU Jun;TANG Zi-Nan. Evolvement Complexity in an Artificial Stock Market
[9]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin; CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method
[10]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2 Sb2 Te5 Films
[11]
ZHANG Ting;LIU Bo;XIA Ji-Lin;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Structure and Electrical Properties of Ge2 Sb2 Te5 Thin Film Used for Ovonic Unified Memory
[12]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method
[13]
YOU Yu;LUO Meng-Bo;YING He-Ping;CHEN Qing-Hu. Short-Time Resistively-Shunted Junction Dynamic Study on Two-Dimensional Fully Frustrated XY Model
[14]
LIU Yin;QIN Xiao-Ying;WANG Li;ZHANG Ming-Xu. Structural Evolution of Nanostructured γ-Ni-28Fe Alloy Investigated by Using the Internal Friction Technique
[15]
LUO Meng-Bo;CHEN Qing-Hu;JIAO Zheng-Kuan. Influence of the Boundary Condition on the Short-Time Dynamic Behaviour of the Ising-Like Phase Transition in Square-Lattice Fully Frustrated XY Models
1995, Vol. 12 
