Atomistic Simulation of He Clustering and Defects Produced in Ni
LIU Ti-Jiang1 , WANG Yue-Xia** , PAN Zheng-Ying1,2 , JIANG Xiao-Mei1 , ZHOU-Liang1 , ZHU Jing1
1 Institute of Modern Physics, Fudan University, Shanghai 200433
2 State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Atomistic Simulation of He Clustering and Defects Produced in Ni
LIU Ti-Jiang1 ;WANG Yue-Xia** ;PAN Zheng-Ying1,2 ;JIANG Xiao-Mei1 ;ZHOU-Liang1 ;ZHU Jing1
1 Institute of Modern Physics, Fudan University, Shanghai 200433
2 State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
关键词 ：
61.80.Az ,
61.72.Qq ,
61.82.Bg ,
02.70.Ns
Abstract ： Using the molecular dynamics method, the stability of small He-vacancy clusters is studied under the condition of the high He and low vacancy densities. The result shows that there is a competition between He atoms detrapped and self-interstitial atoms (SIAs) emitted during the clustering of He atoms. When the He number is above a critical value of 9, the SIA emission is predominant. The SIA emission can result in deep capture of He atoms since the binding energy of He to a He-vacancy cluster is increased with the number of SIAs created. The cluster thus grows up. In addition, more SIAs are created when the temperature is elevated. The average volume of a He atom is increased. The cluster expansion takes place at high temperature.
Key words ：
61.80.Az
61.72.Qq
61.82.Bg
02.70.Ns
出版日期: 2006-05-01
:
61.80.Az
(Theory and models of radiation effects)
61.72.Qq
(Microscopic defects (voids, inclusions, etc.))
61.82.Bg
(Metals and alloys)
02.70.Ns
(Molecular dynamics and particle methods)
引用本文:
LIU Ti-Jiang;WANG Yue-Xia**;PAN Zheng-Ying;JIANG Xiao-Mei;ZHOU-Liang;ZHU Jing. Atomistic Simulation of He Clustering and Defects Produced in Ni[J]. 中国物理快报, 2006, 23(5): 1261-1264.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1261
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