Reactive Deposition Epitaxial Growth of β-FeSi2 Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction
WANG Lianwei, LIN Chenglu, SHEN Qinwo, NI Rushan, ZOU Shichang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
Reactive Deposition Epitaxial Growth of β-FeSi2 Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction
WANG Lianwei;LIN Chenglu;SHEN Qinwo;NI Rushan;ZOU Shichang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
关键词 ：
68.55.Bd ,
61.14.-x ,
68.55.Nq
Abstract ： Reactive deposition epitaxial growth of β-FeSi2 film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction. Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition. The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.
Key words ：
68.55.Bd
61.14.-x
68.55.Nq
出版日期: 1995-10-01
引用本文:
WANG Lianwei;LIN Chenglu;SHEN Qinwo;NI Rushan;ZOU Shichang. Reactive Deposition Epitaxial Growth of β-FeSi2 Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction[J]. 中国物理快报, 1995, 12(10): 613-616.
2 Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction. Chin. Phys. Lett., 1995, 12(10): 613-616.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I10/613
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