Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface
WANG Li, HE Wenguang, YANG Guozheu, ZHANG Xicheng*
Optical Physics Laboratory, Institute of Physics, Academia Sinica, Beijing 100080
* Department of Physics, Rensselaer Polytechnic Institute, Tory, NY 12180, USA
Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface
WANG Li;HE Wenguang;YANG Guozheu;ZHANG Xicheng*
Optical Physics Laboratory, Institute of Physics, Academia Sinica, Beijing 100080
* Department of Physics, Rensselaer Polytechnic Institute, Tory, NY 12180, USA
关键词 ：
78.47.+p
Abstract ： Terahertz (THz) far infrared radiation with a subpicosecond pulse duration is generated from GaAs(100) surface illuminated by femtosecond laser pulses. By illuminating the sample with another pump pulse, we observe an enhancement of THz emission. A mechanism of photocarriers trapping by impurities and defects in the depletion layer is proposed.
Key words ：
78.47.+p
出版日期: 1995-11-01
引用本文:
WANG Li;HE Wenguang;YANG Guozheu;ZHANG Xicheng*. Femtosecond Optical Pump Induced Enhancement of Terahertz Radiation from GaAs Surface[J]. 中国物理快报, 1995, 12(11): 689-692.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I11/689
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1995, Vol. 12 
