Abstract： In2S3 nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350°C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800°C in O2 flow. This process allows the transformation of nanocrystal In2O3 films from In2S3 films and the reaction completes at 600°C. These results indicate that the In2O3 film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.
(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))
引用本文:
M. Öztas;M. Bedir; Z. Öztürk;D. Korkmaz;S. Sur. Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films[J]. 中国物理快报, 2006, 23(6): 1610-1012.
M. Ö, ztas, M. Bedir, Z. Ö, ztürk, D. Korkmaz, S. Sur. Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films. Chin. Phys. Lett., 2006, 23(6): 1610-1012.
2006, Vol. 23 
