Photoluminescence Studies of Single Submonolayer InAs Structures
Grown on GaAs (001) Matrix
LI Wei, WANG Zhanguo, LIANG Jiben, XU Bo, ZHU Zhanping, YUAN Zhiliang1, LI Jian2
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academia Sinica, Beijing 100083
1National Semiconductor Superlattice Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083
2National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083
Photoluminescence Studies of Single Submonolayer InAs Structures
Grown on GaAs (001) Matrix
LI Wei;WANG Zhanguo;LIANG Jiben;XU Bo;ZHU Zhanping;YUAN Zhiliang1;LI Jian2
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academia Sinica, Beijing 100083
1National Semiconductor Superlattice Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083
2National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083
Abstract： We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.
1995, Vol. 12 
