Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si
LIU Ping, LIN Chenglu, ZHOU Zuyao, ZOU Shichang, WENG Huiming1, HAN Rongdian1, LI Bingzong2
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
1Department of Modern Physics, University of Science and Technology of China, Hefei 230026
2Department of Electronic Engineering, Fudan University, Shanghai 200433
Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si
LIU Ping;LIN Chenglu;ZHOU Zuyao;ZOU Shichang;WENG Huiming1;HAN Rongdian1;LI Bingzong2
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
1Department of Modern Physics, University of Science and Technology of China, Hefei 230026
2Department of Electronic Engineering, Fudan University, Shanghai 200433
Abstract: Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter, S. It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitavial CoSi2 formed by the ternary reaction is quite different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.
(Solid surfaces and solid-solid interfaces: structure and energetics)
引用本文:
LIU Ping;LIN Chenglu;ZHOU Zuyao;ZOU Shichang;WENG Huiming;HAN Rongdian;LI Bingzong. Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si
[J]. 中国物理快报, 1994, 11(4): 231-234.
LIU Ping, LIN Chenglu, ZHOU Zuyao, ZOU Shichang, WENG Huiming, HAN Rongdian, LI Bingzong. Slow Positron Annihilation in Silicide Films Formed by Solid State Interaction of Co/Ti/Si and Co/Si
. Chin. Phys. Lett., 1994, 11(4): 231-234.