Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface
LIU Yao, XIAO Xurui, LI Xueping, REN Xinmin, ZHENG Haiqun*, ZENG Yiping*, YAN Chunhui*, SUN Dianzhao*
The Center of Photoelectrochemistry, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101
*Institute of Semiconductors, Academia Sinica, Beijing 100083
Photoelectrochemical Behavior of the GaAs/A1xGal-xAs Superlattice Elect rode/Electrolyte Interface
LIU Yao;XIAO Xurui;LI Xueping;REN Xinmin;ZHENG Haiqun*;ZENG Yiping*;YAN Chunhui*;SUN Dianzhao*
The Center of Photoelectrochemistry, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101
*Institute of Semiconductors, Academia Sinica, Beijing 100083
Abstract： Single and multiple quantum wells of lattice-matched superlattices material GaAs/A1xGal-xAs have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. Structured photocurrent spectra in the potential range of -1.8 to 1.0 V (vs standard calomel electrode) were obtained. The quantum yields for both superlattice electrodes were estimated and compared.
1994, Vol. 11 
