Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films
XU Jian-Ping1,2, SHI Shao-Bo3, LI Lan1,2, ZHANG Xiao-Song1,2, WANG Ya-Xin3, CHEN Xi-Ming4
1Institute of Material Physics, Key Laboratory of DisplayMaterials and Photoelectric Devices (Ministry of Education), TianjinUniversity of Technology, Tianjin 3003842Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology, Tianjin 3003843Department of Mathematics and Physics, Tianjin University ofTechnology and Education, Tianjin 3002224School of Electronic Information and Communication Engineering,Tianjin University of Technology, Tianjin 300384
Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films
XU Jian-Ping1,2, SHI Shao-Bo3, LI Lan1,2, ZHANG Xiao-Song1,2, WANG Ya-Xin3, CHEN Xi-Ming4
1Institute of Material Physics, Key Laboratory of DisplayMaterials and Photoelectric Devices (Ministry of Education), TianjinUniversity of Technology, Tianjin 3003842Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology, Tianjin 3003843Department of Mathematics and Physics, Tianjin University ofTechnology and Education, Tianjin 3002224School of Electronic Information and Communication Engineering,Tianjin University of Technology, Tianjin 300384
The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si (100) substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700 \circC. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial oxygen (Oi), interstitial zinc (Zni) and zinc vacancy,which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.
The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si (100) substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700 \circC. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial oxygen (Oi), interstitial zinc (Zni) and zinc vacancy,which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.
(Experimental determination of defects by diffraction and scattering)
引用本文:
XU Jian-Ping;SHI Shao-Bo;LI Lan;ZHANG Xiao-Song;WANG Ya-Xin;CHEN Xi-Ming. Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films[J]. 中国物理快报, 2010, 27(4): 47803-047803.
XU Jian-Ping, SHI Shao-Bo, LI Lan, ZHANG Xiao-Song, WANG Ya-Xin, CHEN Xi-Ming. Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films. Chin. Phys. Lett., 2010, 27(4): 47803-047803.
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,which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions. 
,which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.