Piezoresistive Effect of Diamond Films Produced by dc Plasma CVD
WANG Wanlu, LIAO Kejun
Department of Physics, Lanzhou University, Lanzhou 730000
Piezoresistive Effect of Diamond Films Produced by dc Plasma CVD
WANG Wanlu;LIAO Kejun
Department of Physics, Lanzhou University, Lanzhou 730000
关键词 ：
81.15.Gh ,
79.60.-i
Abstract ： The piezoresistive effect of polycrystalline p-type diamond films formed by dc plasma chemical vapour deposition has been investigated. The gauge factor is about 116 at 500 microstrains at room temperature, and strongly increases with increasing temperature, exceeding that of polycrystalline- and single-silicon. The origin of the piezoresistivity in boron doped polycrystalline diamond films may be ascribed to strain-induced shift of the boron acceptor level and grain boundaries.
Key words ：
81.15.Gh
79.60.-i
出版日期: 1994-09-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
79.60.-i
(Photoemission and photoelectron spectra)
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