Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs
Single Quantum Wells
SHEN Wenzhong, SHEN Xuechu, TANG Wenguo, T. Andersson*
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083
* Department of Physics, Chalmers University of Technology, 5-41296 Goteborg, Sweden
Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs
Single Quantum Wells
SHEN Wenzhong;SHEN Xuechu;TANG Wenguo;T. Andersson*
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083
* Department of Physics, Chalmers University of Technology, 5-41296 Goteborg, Sweden
关键词 ：
72.40.+w ,
73.40.Lq ,
78.55.-m
Abstract ： Resonably good agreement among the photoluminescence, absorption, in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In0.20 Ga0.80 As/GaAs single quantum wells. The strain of each sample has been deduced.
Key words ：
72.40.+w
73.40.Lq
78.55.-m
出版日期: 1994-11-01
:
72.40.+w
(Photoconduction and photovoltaic effects)
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
78.55.-m
(Photoluminescence, properties and materials)
引用本文:
SHEN Wenzhong;SHEN Xuechu;TANG Wenguo;T. Andersson*. Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs
Single Quantum Wells
[J]. 中国物理快报, 1994, 11(11): 693-696.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I11/693
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