Cubic Silicon Carbite Film Growth and Characterization by Hot
Filament Chemical Vapor Deposition
SHI Hongtao, ZHANG Rong, ZHENG Youdou, HE Yuliang, LIU Xiangna
Department of Physics, Nanjing University, Nanjing 210008
Cubic Silicon Carbite Film Growth and Characterization by Hot
Filament Chemical Vapor Deposition
SHI Hongtao;ZHANG Rong;ZHENG Youdou;HE Yuliang;LIU Xiangna
Department of Physics, Nanjing University, Nanjing 210008
关键词 :
78.20.-e ,
78.30.-j ,
78.55.-m
Abstract : Cubic silicon carbide films (β-Sic) have been successfully grown on monocrystalline silicon wafers by hot filament chemical vapor deposition (HFCVD) at temperatures ranging from 500 to 650°C, fulfilled by a two step process. Raman spectrum of the HFCVD-grown β-SiC films shows a characteristic peak at 975 cm-1 with a full width at half maximum (FWHM) of 76cm-1 . At room temperature, the films emit visible photoluminescence at 580nm with an FWHM of 0.4eV. X-ray diffraction and x-ray photoelectron spectroscopy investigations reveal that the epitaxial films are of good quality.
Key words :
78.20.-e
78.30.-j
78.55.-m
出版日期: 1994-11-01
:
78.20.-e
(Optical properties of bulk materials and thin films)
78.30.-j
(Infrared and Raman spectra)
78.55.-m
(Photoluminescence, properties and materials)
引用本文:
SHI Hongtao;ZHANG Rong;ZHENG Youdou;HE Yuliang;LIU Xiangna. Cubic Silicon Carbite Film Growth and Characterization by Hot
Filament Chemical Vapor Deposition
[J]. 中国物理快报, 1994, 11(11): 709-712.
SHI Hongtao, ZHANG Rong, ZHENG Youdou, HE Yuliang, LIU Xiangna. Cubic Silicon Carbite Film Growth and Characterization by Hot
Filament Chemical Vapor Deposition
. Chin. Phys. Lett., 1994, 11(11): 709-712.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I11/709
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