Optical and Structural Properties of AP-MOVPE GaInP/GaAs Heterostructures
REN Hongwen, HUANG Bolin, XU Xian gang, JIANG Minhua, ZHENG Wanhua, XU Junying, ZHUANG Wanru
Institute of Crystal Materials, Shandong University, Jinan 250100
National Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Academia Sinica, Beijing 100083
Optical and Structural Properties of AP-MOVPE GaInP/GaAs Heterostructures
REN Hongwen;HUANG Bolin;XU Xian gang;JIANG Minhua;ZHENG Wanhua;XU Junying;ZHUANG Wanru
Institute of Crystal Materials, Shandong University, Jinan 250100
National Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Academia Sinica, Beijing 100083
关键词 ：
81.15.Gh ,
66.30.Ny ,
73.40.Kp
Abstract ： Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressuremetal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy. Indium segregation, memory effect of In into GaAs and the carry-over of As in the GaInP layer during the growth process were considered as three major factors giving rise to the anomalous emissions in the PL spectra. Both thermal annealing and zinc doping strongly enhanced the compositional interdiffusion near the heterointerfaces.
Key words ：
81.15.Gh
66.30.Ny
73.40.Kp
出版日期: 1994-12-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
66.30.Ny
(Chemical interdiffusion; diffusion barriers)
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
REN Hongwen;HUANG Bolin;XU Xian gang;JIANG Minhua;ZHENG Wanhua;XU Junying;ZHUANG Wanru. Optical and Structural Properties of AP-MOVPE GaInP/GaAs Heterostructures[J]. 中国物理快报, 1994, 11(12): 778-781.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I12/778
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1994, Vol. 11 
