Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy
XU Huai-zhe, JIANG Wei-hong, XU Bo, ZHOU Wei, WANG Zhan-guo
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy
XU Huai-zhe;JIANG Wei-hong;XU Bo;ZHOU Wei;WANG Zhan-guo
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
81.05.Ea ,
78.55.Cr ,
68.55.Jk
Abstract ： Self-assembled Inx Gal-x As quantum dots (QDs) on (311) and (100) GaAs surfaces have been grown by conventional solid source molecular beam epitaxy. Spontaneously ordering alignment of Inx Gal-x As QDs with lower In content around 0.3 has been observed on As-terminated (B type) surfaces. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311) B surface, and is strongly dependent upon the In content x. The ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) and (311) Ga-terminated (A type) substrates.
Key words ：
81.05.Ea
78.55.Cr
68.55.Jk
出版日期: 1999-01-01
引用本文:
XU Huai-zhe;JIANG Wei-hong;XU Bo;ZHOU Wei;WANG Zhan-guo
. Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy[J]. 中国物理快报, 1999, 16(1): 68-70.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I1/68
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