Localized and Delocalized States at the Band Gap in Heteroepitaxial GaAs Grown on Si
LIANG Jia-chang1 , XU Zhou1 , LE Xiao-yun2
1 Department of Basic Sciences, Civil Aviation Institute of China, Tianjin 300300
2 Institute of Heavy Ion Physics, Peking University, Beijing 100871
Localized and Delocalized States at the Band Gap in Heteroepitaxial GaAs Grown on Si
LIANG Jia-chang1 ;XU Zhou1 ;LE Xiao-yun2
1 Department of Basic Sciences, Civil Aviation Institute of China, Tianjin 300300
2 Institute of Heavy Ion Physics, Peking University, Beijing 100871
关键词 :
71.55.Jv ,
68.55.Ln ,
78.55.Cr
Abstract : There exist the interfacial mismatch strains and high density structural defects in heteroepitaxial GaAs grown on Si (GaAs/Si) because of a large misfit of the lattice constants and a large difference in linear thermal expansion coefficient between GaAs and Si materials. Our experiments show that the disordering in GaAs/Si epilayers strongly depends on their growth condition, especially on the concentration ratio [As]/[Ga] and demonstrate that at [As]/[Ga]=20 to 40 the relationship of temperature versus intensities of the dominant photoluminescence (PL) peaks, related to the delocalized states at the band gap of GaAs/Si, satisfies an Arrhenius equation to determine the thermal activation energies of delocalized states and at [As]/[Ga] ≥ 50 the relationship of temperature versus intensities of the dominant PL peaks, related to the localized states, satisfies an equation valid for amorphous semiconductors to determine the characteristic temperatures of localized states reflecting the disorder degree in GaAs/Si epilayers.
Key words :
71.55.Jv
68.55.Ln
78.55.Cr
出版日期: 1999-02-01
:
71.55.Jv
(Disordered structures; amorphous and glassy solids)
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
78.55.Cr
(III-V semiconductors)
引用本文:
LIANG Jia-chang;XU Zhou;LE Xiao-yun. Localized and Delocalized States at the Band Gap in Heteroepitaxial GaAs Grown on Si[J]. 中国物理快报, 1999, 16(2): 132-133.
LIANG Jia-chang, XU Zhou, LE Xiao-yun. Localized and Delocalized States at the Band Gap in Heteroepitaxial GaAs Grown on Si. Chin. Phys. Lett., 1999, 16(2): 132-133.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I2/132
[1]
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan. Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing [J]. 中国物理快报, 2006, 23(9): 2579-2582.
[2]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching [J]. 中国物理快报, 2006, 23(8): 2243-2246.
[3]
XU Wei-Wei;DAI Song-Yuan; HU Lin-Hua;LIANG Lin-Yun;WANG Kong-Jia. Influence of Yb-Doped Nanoporous TiO2 Films on Photovoltaic Performance of Dye-Sensitized Solar Cells [J]. 中国物理快报, 2006, 23(8): 2288-2291.
[4]
WANG Fang-Zhen;CHEN Zhang-Hai;GONG Qian;R. Nötzel;BAI Li-Hui;SHEN Xue-Chu. Efficient Exciton Transfer from In0.35 Ga0.65 As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates [J]. 中国物理快报, 2006, 23(5): 1310-1313.
[5]
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy [J]. 中国物理快报, 2006, 23(4): 1005-1008.
[6]
JING Shi-Wei;LIU Yi-Chun;LIANG Yu;MA Jian-Gang;LU You-Ming;SHEN De-Zhen;ZHANG Ji-Ying;FAN Xi-Wu;MU Ri-Xiang. Compositional and Structural Properties of TiO2-x Nx Thin Films Deposited by Radio-Frequency Magnetron Sputtering [J]. 中国物理快报, 2006, 23(3): 682-685.
[7]
YAN Feng-Ping;JIAN Shui-Sheng;WANG Lin;Kenichi OGATA;Kazuto KOIKE;Shigehiko SASA;Masatake INOUE;Mitsuaki YANO;. Measurement of Mg Content in Zn1-x Mgx O Films by Electron Probe Microanalysis [J]. 中国物理快报, 2006, 23(2): 313-315.
[8]
PENG Cheng-Xiao;WENG Hui-Min;YANG Xiao-Jie;YE Bang-Jiao;CHENG Bin;ZHOU Xian-Yi;HAN Rong-Dian. Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation [J]. 中国物理快报, 2006, 23(2): 489-492.
[9]
LI Wei;MA Zhong-Quan;WANG Ye;WANG De-Ming. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition [J]. 中国物理快报, 2006, 23(1): 178-181.
[10]
HAN Xiu-Xun;WU Jie-Jun;LI Jie-Min;CONG Guang-Wei;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo. Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped Alx Ga1-x N/GaN Heterostructure [J]. 中国物理快报, 2005, 22(8): 2096-2099.
[11]
ZHAO Qian;PAN Jiao-Qing;ZHOU Fan;WANG Bao-Jun;WANG Lu-Feng;WANG Wei. A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth [J]. 中国物理快报, 2005, 22(8): 2016-2019.
[12]
LU Li-Wu;CHEN Ting-Jie;SHEN Bo;WANG Jiang-Nong;GE Wei-Kun. Optical Properties of Phase-Separated GaN1-x Px Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition [J]. 中国物理快报, 2005, 22(8): 2081-2083.
[13]
LÜWei;LI Da-Bing;LI Chao-Rong;CHEN Gang;ZHANG Ze. Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of Inx Ga1-x N/GaN Multiple Quantum Wells [J]. 中国物理快报, 2005, 22(4): 971-974.
[14]
WU Shu-Dong;GUO Li-Wei;WANG Wen-Xin;LI Zhi-Hua;NIU Ping-Juan;HUANG Qi;ZHOU Jun-Ming. Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source [J]. 中国物理快报, 2005, 22(4): 960-962.
[15]
CHEN Guang-De; ZHU You-Zhang;YAN Guo-Jun;YUAN Jin-She;K. H. Kim;J. Y. Lin;H. X. Jiang. Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys [J]. 中国物理快报, 2005, 22(2): 472-474.