Semiconductor-Like Properties of Sputtered Fex Cul-x Thin Films
GE Hong-liang1,2 , SHA Jian1 , WANG Zhuang-bing1 , FENG Chun-mu1 , JIAO Zheng-kuan1
1 Department of Physics, Zhejiang University, Hangzhou 310027
2 Physics Division, China Institute of Metrology, Hangzhou 310034
Semiconductor-Like Properties of Sputtered Fex Cul-x Thin Films
GE Hong-liang1,2 ;SHA Jian1 ;WANG Zhuang-bing1 ;FENG Chun-mu1 ;JIAO Zheng-kuan1
1 Department of Physics, Zhejiang University, Hangzhou 310027
2 Physics Division, China Institute of Metrology, Hangzhou 310034
关键词 ：
61.43.Dq ,
73.50.-h ,
81.15.Cd
Abstract ： Amorphous Fex Cul-x thin films with x ranging from 0.21 to 0.81 have been obtained by rf-magnetron sputtering. The structure and the electric transport properties of the films can be controlled by both the composition and annealing temperature. The resistances of the films decrease with the temperature increasing from 12 to 300K, which is the typical semiconductor characteristic. After annealing at 400°C for 5h, the amorphous Fex Cul-x thin film is crystallized and exhibits electric transport property an normal metal film. The dependence of resistance- temperature characteristics of the films on the composition and deposition time is described.
Key words ：
61.43.Dq
73.50.-h
81.15.Cd
出版日期: 1999-01-01
:
61.43.Dq
(Amorphous semiconductors, metals, and alloys)
73.50.-h
(Electronic transport phenomena in thin films)
81.15.Cd
(Deposition by sputtering)
引用本文:
GE Hong-liang;SHA Jian;WANG Zhuang-bing;FENG Chun-mu;JIAO Zheng-kuan
. Semiconductor-Like Properties of Sputtered Fex Cul-x Thin Films[J]. 中国物理快报, 1999, 16(1): 41-43.
x Cul-x Thin Films. Chin. Phys. Lett., 1999, 16(1): 41-43.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I1/41
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1999, Vol. 16 
