A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch
CHEN Yong-hai1, WANG Zhan-guo1, YANG Zhi-yu2
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, the Hong Kong University of Science and Technology, Kowloon, Hong Kong
A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch
CHEN Yong-hai1;WANG Zhan-guo1;YANG Zhi-yu2
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, the Hong Kong University of Science and Technology, Kowloon, Hong Kong
Abstract： A new interface anisotropic potential, which is proportional to the lattice mismatch of interfaces and has no fitting parameter, has been deduced for (001) zinc-blende semiconductor interfaces. The comparison with other interface models is given for GaAs/AlAs and GaAs/InAs interfaces. The strong influence of the interface anisotropic potential on the inplane optical anisotropy of GaAs/AlGaAs low dimensional structures is demonstrated theoretically within the envelope function approximation.
CHEN Yong-hai;WANG Zhan-guo;YANG Zhi-yu. A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch
[J]. 中国物理快报, 1999, 16(1): 56-58.
CHEN Yong-hai, WANG Zhan-guo, YANG Zhi-yu. A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch
. Chin. Phys. Lett., 1999, 16(1): 56-58.
1999, Vol. 16 
