Cross Sections of Electron Detachment for Si- and Ge- in Collision with Ar
GAO Mei1,2, YANG En-Bo1,2, LIU Yong1,2, ZHANG Xue-Mei1,2,
LU Fu-Quan1
¹Key Lab of Applied Ion Beam Physics of MOE, Fudan University, Shanghai 200433
²Shanghai EBIT Lab, Institute of Modern Physics, Fudan University, Shanghai 200433
Cross Sections of Electron Detachment for Si- and Ge- in Collision with Ar
GAO Mei1,2;YANG En-Bo1,2;LIU Yong1,2;ZHANG Xue-Mei1,2;
LU Fu-Quan1
¹Key Lab of Applied Ion Beam Physics of MOE, Fudan University, Shanghai 200433
²Shanghai EBIT Lab, Institute of Modern Physics, Fudan University, Shanghai 200433
Abstract： Single electron detachment cross section for 10--40 keV Si- and Ge- in collisions with Ar are measured and compared with other available experimental results. In our experimental energy region, the trend of cross sections is almost constant. The cross sections of Ge larger than Si can be understood by including electron affinity and size of negative ions.
GAO Mei;YANG En-Bo;LIU Yong;ZHANG Xue-Mei;
LU Fu-Quan. Cross Sections of Electron Detachment for Si- and Ge- in Collision with Ar[J]. 中国物理快报, 2006, 23(12): 3253-3255.
GAO Mei, YANG En-Bo, LIU Yong, ZHANG Xue-Mei,
LU Fu-Quan. Cross Sections of Electron Detachment for Si- and Ge- in Collision with Ar. Chin. Phys. Lett., 2006, 23(12): 3253-3255.
2006, Vol. 23 
