Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO3 /Si Boundary
LI Wei, YIN Jianhua, SHUI Yongan
Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210008
Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO3 /Si Boundary
LI Wei;YIN Jianhua;SHUI Yongan
Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210008
关键词 :
62.30.+d ,
46.60.Df
Abstract : The acoustoelectric nonlinear effect due to the electrical nonlinearity of semi-conductor has been observed as presented in this article by using vertically incident bulk wave at LiNbO3 /Si boundary. This effect is closely related to the bias voltage applied to the semiconductor Si. The results we have obtained provide a feasible new structure for the further study of acoustoelectric nonlinear coupling between piezoelectrics and semiconductors.
Key words :
62.30.+d
46.60.Df
出版日期: 1993-06-01
引用本文:
LI Wei;YIN Jianhua;SHUI Yongan. Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO3 /Si Boundary[J]. 中国物理快报, 1993, 10(6): 369-370.
LI Wei, YIN Jianhua, SHUI Yongan. Acoustoelectric Nonlinear Effect of Vertically Incident Bulk Wave at LiNbO3 /Si Boundary. Chin. Phys. Lett., 1993, 10(6): 369-370.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1993/V10/I6/369
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