Effect of the Two Distinct Bi on the Electronic Structure of BaBiO3
ZHANG Zhipeng, SHEN Yaowen, HUANG Meichun
Department of Physics, Xiarnen University, Xiarnen 361005
Effect of the Two Distinct Bi on the Electronic Structure of BaBiO3
ZHANG Zhipeng;SHEN Yaowen;HUANG Meichun
Department of Physics, Xiarnen University, Xiarnen 361005
关键词 ：
71.20.-b
Abstract ： The band-structure of BaBiO3 has been calculated by using LMTO-ASA method to a supercell, in which the breathing-mode displacements of oxygen atoms and two oxidation states of Bi were considered. The results indicate that BaBiO3 is a semiconductor with a gap of 1.5eV, which, unlike previous calculations, is essentially consistent with experiments.
Key words ：
71.20.-b
出版日期: 1993-06-01
:
71.20.-b
(Electron density of states and band structure of crystalline solids)
引用本文:
ZHANG Zhipeng;SHEN Yaowen;HUANG Meichun. Effect of the Two Distinct Bi on the Electronic Structure of BaBiO3 [J]. 中国物理快报, 1993, 10(6): 371-373.
3 . Chin. Phys. Lett., 1993, 10(6): 371-373.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1993/V10/I6/371
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1993, Vol. 10 
