Evidence of the Precipitates in the V-Shaped Defects of Undoped GaN
KANG Jun-yong1 , HUANG Qi-sheng1 , OGAWA Tomoya2
1 Department of Physics, Xiamen University, Xiamen 361005
2 Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
Evidence of the Precipitates in the V-Shaped Defects of Undoped GaN
KANG Jun-yong1 ;HUANG Qi-sheng1 ;OGAWA Tomoya2
1 Department of Physics, Xiamen University, Xiamen 361005
2 Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
关键词 ：
68.55.Ln ,
81.70.Jb ,
32.30.Rj
Abstract ： Precipitates in undoped GaN epilayers with specular surfaces grown on sapphire substrates were imaged by super high-resolution electron microscopy (HREM) and analyzed by energy-dispersive x-ray spectrometry (EDXS). The HREM images of the precipitates appeared more or less hexagonal intersection with several ten-nanometer large, which is the same as that of the V-shape defects. The EDXS spectra of the precipitates were mainly composed of the characteristic x-rays of oxygen, carbon, and gallium elements. The results suggest that the precipitates nucleate at the pinholes of the V-shape cavities and grow as the GaN growth.
Key words ：
68.55.Ln
81.70.Jb
32.30.Rj
出版日期: 1999-01-01
:
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
81.70.Jb
(Chemical composition analysis, chemical depth and dopant profiling)
32.30.Rj
(X-ray spectra)
引用本文:
KANG Jun-yong;HUANG Qi-sheng;OGAWA Tomoya. Evidence of the Precipitates in the V-Shaped Defects of Undoped GaN[J]. 中国物理快报, 1999, 16(1): 47-49.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I1/47
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